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IEEE EDS Japan Chapter 会員各位

IEEE EDS Kansai Chapter 会員各位

IEEE Electron Devices Society Japan Chapter

Chair 木村 紳一郎

Vice Chair 鳥海　明

DL(Distinguished Lecturer)講演会のお知らせ

IEEE EDS Distinguished Lecturerの

Prof. John Robertson (Cambridge University)

による下記のDL講演会を開催致します。

皆様のご参加を頂きたくご案内申し上げます。

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【日　時】平成23年2月16日（水）午後4時〜5時

【会　場】東京工業大学すずかけ台キャンパス

　　　　　Ｊ２棟20階　中会議室

　　　（横浜市緑区長津田町4259、最寄り駅：東急田園都市線すずかけ台駅）

【講演者】Prof. John Robertson

(Engineering Department, Cambridge University, Cambridge, UK)

【タイトル】

Electronic properties of Germanium : oxide interfaces for future CMOS

【概要】

Germanium has higher electron and hole mobility than silicon, and is being strongly considered as a future channel material for CMOS, particularly for the p-type FET [1-3], because it is less complicated to use than III-V semiconductors.

However, although Ge lies just below Si in the Periodic table, it has considerable differences in its behaviour. Many workers have noted that GeO2 is a less favourable insulator than SiO2, due to the volatility of molecular GeO. The talk discusses factors that lead a greater difficulty in passivation of Ge interfaces; the heat of formation of GeO2 compared to SiO2, the band gap of GeO2 compared to SiO2, the greater stability of the GeII valence, the nature of defects in GeO2 and the behavior of hydrogen in GeO2.

1. S Takagi et al, Solid State Electronics 51 526 (2007)

2. Y Kamata, Materials Today 11 30 (2008)

3. K Kita, S K Wang, M Yoshida, C H Lee, K

Nagashio, T Nishimura, A Toriumi, IEDM (2009) paper 29.6

連絡先

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東京工業大学

フロンティア研究機構

　岩　井　　　洋

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〒226-8502

横浜市緑区長津田町4259

Mail-Box：J2-68

TEL:045-924-5471

FAX:045-924-5584

E-mail:iwai.h.aa@m.titech.ac.jp

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IEEE EDS Japan Chapter連絡先:Secretary 鳥居　和功

E-mail:kazuyoshi.torii@ieee.org

Home page:http://www.ieee-jp.org/section/tokyo/chapter/ED-15/

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