EDS Newsletter 2008年1月号
On July 12, 2007, ED Japan Chapter organized a technical meeting
entitled “Possibility of controlling variations
in semiconductor device behaviors: How do we model the variations?,” which
was held at
Firstly, Prof. Mitiko Miura-Mattausch of Hiroshima Univ. gave a DL
lecture to overview the current status of the circuit variation analysis and
its future applications. The title of her talk was “Status of device modeling technology: Toward analyzing and predicting
the variations among integrated circuits.”
From the device development point of view, three talks were given.
Dr. Ken-ichiro Sonoda of Renesas Technology gave a presentation on “Statistical analysis and modeling of Random
Telegraph Signal (RTS) in small-geometry MOSFETs.” Dr. Tetsufumi Tanamoto
of Toshiba discussed the quantum effect in future MOSFETs in a talk entitled “Fluctuation of ballistic conduction current
caused by electron traps in the Kondo regime.” An interesting talk on “A methodology to optimize device structures
using TCAD” was given by Dr. Koichi Fukuda of Oki Electric Industry.
In the latter half of the meeting, Prof. Hans Juergen Mattausch of
All the speakers
engaged in lively and fruitful discussions with the audience. This meeting,
which was attended by more than 100 people, was very beneficial for chapter
members and was a great success.
More
than 100 people attended the ED Japan Chapter technical meeting held at