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EDS Newsletter 2007年4月号
A DL talk
entitled "Improvement of characteristics of deep sub-micron CMOS devices
with halo implantation and high-k dielectric" was given by Prof. Chandan
K. Sarkar of Jadavpur University, Calcutta, India, at the Suzukakedai Campus of Tokyo
Institute of Technology, Yokohama,
Japan, on Nov.
28, 2006. The talk was followed by a lively discussion on the suppression of
the short-channel effects and the potential of high-k materials between the
lecturer and the audience. This DL meeting attended by 15 people was very
meaningful.
On Dec.
20, 2006, a DL meeting was held at New
Industry Creation
Hatchery Center,
Tohoku University,
Sendai. Prof.
Herzl Aharoni of Ben-Gurion University of the Negev, Israel, lectured on recent
interesting technologies. The title of the lecture was "Two terminal and
multi-terminal efficient planar silicon light emitting devices (Si-LED's)
fabricated by standard IC technology as components for all-silicon monolithic
integrated optoelectronic systems." The presentation offered an
opportunity to get to grips with up-to-date, interesting and useful research.
The meeting, with more than 30 participants, was a great success.
In
addition, in the latter half of the year from July 2006 to Dec. 2006, ED Japan
Chapter had 6 joint technical meetings with the Japan Society of Applied
Physics, the Institute
of Electronics,
Information and Communication Engineers, etc.
The
DL meeting on Nov. 28, 2006. From the third person from the left at the front:
Prof. Hiroshi Iwai, Partner and EDS Jr. Past President and Prof. Chandan K.
Sarkar, Jadavpur University,
India