The 2015 International Meeting

for Future of Electron Devices, Kansai


June 4-5, 2015

Ryukoku University Avanti Kyoto Hall, Kyoto, Japan




The 13th Conference Theme:

"New functional devices for the next generationh


The 13th IMFEDK is sponsored by IEEE EDS Kansai Chapter and

technically cosponsored by IEEE MTT-S Kansai Chapter






IMFEDK2015 Website is open (Feb 4, 2015)


Call for Papers, IMFEDK2015

2nd announcement, IMFEDK2015


Deadline of Short Abstract Submission for Paper Selection: Feb. 20, 2015 Feb. 27, 2015 EXTENDED

Notification of Acceptance: Mar. 4, 2015 Mar. 11, 2015 EXTENDED

Deadline of Final Manuscript Submission: Mar. 27, 2015






Advanced Program NEW


Keynote Speaker


Shinich Takagi (The University of Tokyo)

gIII-V/Ge MOSFETs and Tunneling FETs on Si platform for Low Power Logic Applicationsh


Invited Talks


Compound devices: Subramaniam Arulkumaran (Nanyang Technological University)

gNano-Channel InAlN/GaN Fin-HEMTs for Ultra- High-Speed Electronicsh


Si devices: Takashi Matsukawa (AIST)

gEvolution of nano-scale CMOS technology for ultra-low-power applicationh


Emerging: devices: Takashi Morie (Kyusyu Institute of Technology)

gCMOS Circuits and Nanodevices for Spike Based Neural Computingh


Tutorials (in Japanese)


Masafumi Hashimoto (Toyota Central R&D Labs.-Retired)

gDevelopment history of blue light-emitting-diodesh


Toshio Ishizaki (Ryukoku University)

gFundamentals and Applications of Microwave Technologyh



Information of speakers NEW




Committee Members


Awarded Researchers of IMFEDK2014



LINK: IEEE EDS Kansai Chapter


LINK: IEEE MTT-S Kansai Chapter




IMFEDK Secretariat (Toshihiko Maemoto, Osaka Institute of Technology)