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The 2015 International Meeting

for Future of Electron Devices, Kansai

 

June 4-5, 2015

Ryukoku University Avanti Kyoto Hall, Kyoto, Japan

 

 

 

The 13th Conference Theme:

"New functional devices for the next generationh

 

The 13th IMFEDK is sponsored by IEEE EDS Kansai Chapter and

technically cosponsored by IEEE MTT-S Kansai Chapter

 

 

 

Information

 

IMFEDK2015 Website is open (Feb 4, 2015)

 

Call for Papers, IMFEDK2015

2nd announcement, IMFEDK2015

 

Deadline of Short Abstract Submission for Paper Selection: Feb. 20, 2015 Feb. 27, 2015 EXTENDED

Notification of Acceptance: Mar. 4, 2015 Mar. 11, 2015 EXTENDED

Deadline of Final Manuscript Submission: Mar. 27, 2015

 

Registration

 

 

 

Advanced Program NEW

 

Keynote Speaker

 

Shinich Takagi (The University of Tokyo)

gIII-V/Ge MOSFETs and Tunneling FETs on Si platform for Low Power Logic Applicationsh

 

Invited Talks

 

Compound devices: Subramaniam Arulkumaran (Nanyang Technological University)

gNano-Channel InAlN/GaN Fin-HEMTs for Ultra- High-Speed Electronicsh

 

Si devices: Takashi Matsukawa (AIST)

gEvolution of nano-scale CMOS technology for ultra-low-power applicationh

 

Emerging: devices: Takashi Morie (Kyusyu Institute of Technology)

gCMOS Circuits and Nanodevices for Spike Based Neural Computingh

 

Tutorials (in Japanese)

 

Masafumi Hashimoto (Toyota Central R&D Labs.-Retired)

gDevelopment history of blue light-emitting-diodesh

 

Toshio Ishizaki (Ryukoku University)

gFundamentals and Applications of Microwave Technologyh

 

 

Information of speakers NEW

 

Location

 

Committee Members

 

Awarded Researchers of IMFEDK2014

 

 

LINK: IEEE EDS Kansai Chapter

 

LINK: IEEE MTT-S Kansai Chapter

 

LINK: IEEE

 

IMFEDK Secretariat (Toshihiko Maemoto, Osaka Institute of Technology)